Reducing the Time Gap at Samsung Semiconductor

In the course of technology development, Samsung narrowed the time gap with advanced chip makers in terms of product development and mass production...

For example, Samsung completed the circuit design of the 1M DRAM in March 1986 and produced a working good die in July 1986. This accomplishment narrowed the gap with the Japanese pioneer from two years for the 256K DRAM to one year for the 1M DRAM. In 1988 Samsung developed the 4M DRAM and narrowed the technological gap in 6 month difference...

Samsung developed the 256M DRAM ahead of Japan in 1994, becoming the leader in DRAM design. Samsung developed the world’s first 1G DRAM in 1996. Samsung was the first company in the world to market all three, the 64M DRAM, the 256M DRAM, and the 1G DRAM.

Throughout this process, technological development at one stage laid an invaluable platform for the subsequent technology development. Samsung’s experience in consumer electronics provided a platform for entering the production of discrete semiconductor devices. This laid a platform for assimilating LSI technology, subsequently for assimilating VLSI technology...

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